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Electrical properties of the silicon oxide/Si structure formed with perchloric acid at 203°CSAKURAI, Takeaki; NISHIYAMA, Masayoshi; NISHIOKA, Yasushiro et al.Solid state communications. 2001, Vol 118, Num 8, pp 391-394, issn 0038-1098Article

Fabrication of Si nanoparticles from Si swarf and application to solar cellsMAEDA, Masanori; IMAMURA, Kentaro; MATSUMOTO, Taketoshi et al.Applied surface science. 2014, Vol 312, pp 39-42, issn 0169-4332, 4 p.Conference Paper

Ph¹-positive acute lymphoblastic leukemia in a patient with a germline MEN1 gene mutationICHIKAWA, Naoaki; KOBAYASHI, Hikaru; SAITO, Hiroshi et al.International journal of hematology. 2003, Vol 78, Num 2, pp 171-172, issn 0925-5710, 2 p.Article

Band alignment of SiO₂/Si structure formed with nitric acid vapor below 500 °CIMAMURA, Kentarou; TAKAHASHI, Masao; IMAI, Shigeki et al.Surface science. 2009, Vol 603, Num 7, pp 968-972, issn 0039-6028, 5 p.Article

Experimental and theoretical studies on N 1s levels of silicon oxynitride filmsTAKAHASHI, Masao; MIZOKURO, Toshiko; NISHIOKA, Yasushiro et al.Surface science. 2002, Vol 518, Num 1-2, pp 72-80, issn 0039-6028, 9 p.Article

Syntheses and luminescent properties of (La_1-xLn_x)₂O₂CN₂(Ln = Pr, Sm, Eu, Tb)TAKAHASHI, Masao; HASHIMOTO, Yasuhiro; KIKKAWA, Shinichi et al.Zairyo. 2000, Vol 49, Num 11, pp 1230-1234, issn 0514-5163Article

Multifractal analysis of textured silicon surfacesJURECKA, Stanislav; ANGERMANN, Heike; KOBAYASHI, Hikaru et al.Applied surface science. 2014, Vol 301, pp 46-50, issn 0169-4332, 5 p.Conference Paper

Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO₂ interfaceMAIDA, Osamu; ASANO, Akira; TAKAHASHI, Masao et al.Surface science. 2003, Vol 542, Num 3, pp 244-252, issn 0039-6028, 9 p.Article

Acoustic spectroscopy and electrical characterization of Si/NAOS-SiO₂/HfO₂ structuresBURY, Peter; MATSUMOTO, Taketoshi; BELLAN, Ivan et al.Applied surface science. 2013, Vol 269, pp 50-54, issn 0169-4332, 5 p.Article

Formation of atomically smooth SiO₂/SiC interfaces at ∼120 °C by use of nitric acid oxidation methodIMAI, Shigeki; FUJIMOTO, Masayuki; ASUHA et al.Surface science. 2006, Vol 600, Num 3, pp 547-550, issn 0039-6028, 4 p.Article

Spectroscopic and electrical properties of ultrathin SiO₂ layers formed with nitric acidASUHA; KOBAYASHI, Takuya; TAKAHASHI, Masao et al.Surface science. 2003, Vol 547, Num 3, pp 275-283, issn 0039-6028, 9 p.Article

Chemical prevention of light-induced degradation in amorphous silicon filmsKOBAYASHI, Hikaru; KASAMA, Yoshiko; FUJINAGA, Tetsushi et al.Solid state communications. 2002, Vol 123, Num 3-4, pp 151-154, issn 0038-1098Article

Postoxidation annealing treatments to improve Si/ultrathin SiO₂ characteristics formed by nitric acid oxidationASUHA; LIU, Yueh-Ling; MAIDA, Osamu et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 12, pp G824-G828, issn 0013-4651Article

About electrical properties of passivated SiO₂/Si structures prepared electro-chemically in HClO₄ solutionsPINCIK, Emil; KOBAYASHI, Hikaru; RUSNAK, Jaroslav et al.Applied surface science. 2013, Vol 269, pp 148-154, issn 0169-4332, 7 p.Article

1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS MethodKUBOTA, Yasushi; MATSUMOTO, Taketoshi; TSUJI, Hiroshi et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 2, pp 385-392, issn 0018-9383, 8 p.Article

Proceedings of the Session on Surface Science of the 4th Vacuum and Surface Sciences Conference of Asia and AustraliaOURA, Kenjiro; ARAKAWA, Ichiro; FUKUTANI, Katsuyuki et al.Applied surface science. 2009, Vol 256, Num 4, issn 0169-4332, 345 p.Conference Proceedings

Adsorption, reaction and desorption of hydrogen on modified Pd(1 1 1) surfacesWINKLER, Adolf.Applied surface science. 2009, Vol 256, Num 4, pp 1114-1119, issn 0169-4332, 6 p.Conference Paper

Design of a mirror aberration corrector and a beam separator for LEEMTSUNO, K; YASUE, T; KOSHIKAWA, T et al.Applied surface science. 2009, Vol 256, Num 4, pp 1035-1041, issn 0169-4332, 7 p.Conference Paper

Electronic excitation processes in rare gas clusters studied by electron energy loss spectroscopyKUBOTERA, Hayato; SAKAI, Satoshi; SEKITSUKA, Tatsuya et al.Applied surface science. 2009, Vol 256, Num 4, pp 1046-1049, issn 0169-4332, 4 p.Conference Paper

Fabrication and scanning tunneling microscopy studies of the Si(1 1 1)-(√31 x √31)-In surfaceZHENG WEI; LIM, Heechul; LEE, Geunseop et al.Applied surface science. 2009, Vol 256, Num 4, pp 1152-1155, issn 0169-4332, 4 p.Conference Paper

Inelastic mean free path, surface excitation parameter, and differential surface excitation parameter in Au for 300-3000 eV electronsNAGATOMI, T; GOTO, K.Applied surface science. 2009, Vol 256, Num 4, pp 1200-1204, issn 0169-4332, 5 p.Conference Paper

Influence of nanometer scale film structure of ZDDP tribofilm on Its mechanical properties: A computational chemistry studyONODERA, Tasuku; KURIAKI, Takanori; KUBO, Momoji et al.Applied surface science. 2009, Vol 256, Num 4, pp 976-979, issn 0169-4332, 4 p.Conference Paper

Photocatalytic property of TiO₂ thin films sputtered-deposited on unheated substratesPIHOSH, Y; GOTO, M; KASAHARA, A et al.Applied surface science. 2009, Vol 256, Num 4, pp 937-942, issn 0169-4332, 6 p.Conference Paper

Preparation of WO₃ nanoparticles and application to NO₂ sensorDAN MENG; YAMAZAKI, Toshinari; YANBAI SHEN et al.Applied surface science. 2009, Vol 256, Num 4, pp 1050-1053, issn 0169-4332, 4 p.Conference Paper